CHA2391 rohs compliant ref. : dsCHA23912240 -28-aug.-02 1/8 specifications subject to change without notice united monolithic semiconductors s.a.s. route dpartementale 128 - b.p.46 - 91401 orsay cede x france tel. : +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 36-40ghz very low noise amplifier gaas monolithic microwave ic description the CHA2391 is a two-stage wide band monolithic low noise amplifier. the circuit is manufactured with a standard phemt process: 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. it is supplied in chip form. main features broad band performance 36-40ghz 2.5db noise figure, 36-40ghz 15db gain, 0.5db gain flatness low dc power consumption, 50ma 20dbm 3rd order intercept point chip size: 1.67 x 1.03 x 0.1mm in out vg 1 vg 2 25 50 vd on wafer typical measurements . main characteristics tamb = +25c symbol parameter min typ max unit fop operating frequency range 36 40 ghz nf noise figure, 36-40ghz 2.5 3 db g gain 12 15 db p1db output power at 1db gain compression 9 dbm esd protections : electrostatic discharge sensitive device observe handling precautions ! 0 4 8 12 16 20 30 31 32 33 34 35 36 37 38 39 40 frequency (ghz) gain (db) 0 1 2 3 4 5 nf (db)
CHA2391 36-40ghz very low noise amplifier ref. : dsCHA23912240 -28-aug.-02 2/8 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 electrical characteristics tamb = +25c, bias conditions:vd = +4v symbol parameter min typ max unit fop operating frequency range 36 40 ghz g gain (1) 12 15 db d g gain flatness (1) 0.5 1.0 db nf noise figure (1) 2.5 3 db vswrin input vswr (1) 3.0:1 vswrout ouput vswr (1) 3.0:1 ip3 3rd order intercept point 20 dbm p1db output power at 1db gain compression 12 dbm vd dc voltage vd vg -2 4 -0.25 4.5 +0.4 v id drain bias current (2) 45 ma (1 ) these values are representative of on-wafer measu rements that are made without bonding wires at the rf ports.when the chip is attached with typi cal 0.15nh input and output bonding wires, the indicated parameters should be improved . (2) 45 ma is the typical bias current used for on w afer measurements, with vg1= vg2. for optimum noise figure, the bias current could be reduced down to 30 ma, adjusting the vg1,2 voltage. absolute maximum ratings (1) tamb = +25c symbol parameter values unit vd drain bias voltage 5.0 v vg gate bias voltage -2.0 to +0.4 v vdg maximum drain to gate voltage (vd-vg) +5.0 v pin maximum peak input power overdrive (2) +15 dbm pin maximum continuous input power +1 dbm top operating temperature range -40 to +85 c tsg storage temperature range -55 to +125 c (1) operation of this device above anyone of these paramaters may cause permanent damage. (2) duration < 1s.
36-40ghz very low noise amplifier CHA2391 ref. : dsCHA23912240 -28-aug.-02 3/8 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 typical results chip typical response (on wafer sij) tamb = +25c bias conditions: vd = +4v, id=45ma freq ghz ms11 db ps11 ms12 db ps12 ms21 db ps21 ms22 db ps22 10 -6,21 154,25 -62,67 -132,87 -22,58 67,85 -2,93 - 143,42 12 -6,33 141,75 -57,99 -156,02 -16,83 50,10 -3,89 - 164,87 14 -6,29 127,36 -55,17 173,41 -12,52 23,11 -4,95 17 8,26 16 -6,08 114,92 -55,88 168,49 -9,73 -5,37 -5,86 161 ,51 18 -5,84 101,82 -53,92 135,46 -7,54 -31,47 -7,18 14 4,01 20 -5,54 86,62 -51,45 138,48 -6,13 -55,85 -8,65 131 ,69 21 -5,43 78,44 -50,53 139,32 -5,41 -67,16 -9,65 127 ,30 22 -5,30 68,96 -49,42 132,07 -4,82 -77,06 -10,46 12 5,73 23 -5,29 58,88 -49,04 122,68 -4,06 -85,86 -11,18 12 4,83 24 -5,35 47,97 -49,34 123,59 -3,25 -94,05 -11,33 12 5,87 25 -5,54 35,38 -47,96 126,63 -2,19 -101,60 -11,19 1 24,77 26 -5,87 21,00 -46,55 123,65 -0,88 -110,55 -11,01 1 25,49 27 -6,47 3,87 -44,77 125,28 0,38 -119,43 -10,17 122 ,17 28 -7,39 -16,23 -43,13 124,81 1,88 -128,85 -9,43 11 7,25 29 -8,77 -41,92 -40,03 123,61 3,63 -138,80 -9,11 10 9,58 30 -10,69 -77,04 -37,67 115,28 5,50 -151,53 -8,70 1 03,41 31 -12,44 -127,88 -35,70 105,15 7,35 -166,04 -8,15 94,50 32 -12,19 170,79 -33,04 93,43 9,18 176,87 -7,69 83, 88 33 -10,65 120,05 -31,11 75,77 10,75 158,36 -7,59 70 ,55 34 -9,85 82,96 -29,60 58,30 12,14 138,69 -7,80 56,0 2 35 -9,98 54,87 -28,64 42,10 13,37 117,54 -8,57 40,6 6 36 -10,94 33,47 -27,69 26,41 14,27 95,66 -9,80 25,1 9 37 -12,52 20,51 -26,89 9,83 14,95 73,24 -11,70 9,54 38 -13,72 17,24 -26,15 -5,87 15,28 51,13 -14,31 -4, 52 39 -13,22 18,64 -25,53 -22,03 15,46 29,79 -17,89 -1 8,79 40 -11,65 9,29 -25,06 -38,88 15,53 8,33 -23,80 -30, 52 41 -10,30 -3,86 -24,91 -56,23 15,40 -12,86 -51,61 - 16,72 42 -8,90 -20,55 -24,74 -72,65 15,17 -32,98 -26,28 1 18,15 43 -7,51 -38,62 -24,62 -88,50 14,89 -52,97 -20,52 1 11,87 44 -6,22 -59,90 -24,63 -105,66 14,54 -73,10 -17,09 101,92 45 -5,17 -81,47 -24,78 -122,84 14,05 -93,80 -14,60 89,21 46 -4,24 -102,42 -25,30 -139,10 13,39 -113,54 -12,9 2 73,66 47 -3,18 -122,95 -25,65 -155,88 12,59 -133,30 -11,9 3 59,95 48 -2,51 -143,29 -26,29 -173,89 11,55 -152,49 -11,1 4 47,16 49 -2,04 -161,80 -27,21 170,58 10,40 -170,65 -10,65 35,08 50 -1,62 -178,03 -27,82 157,24 9,39 172,00 -9,69 20 ,78
CHA2391 36-40ghz very low noise amplifier ref. : dsCHA23912240 -28-aug.-02 4/8 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 typical results chip typical response (on wafer sij) tamb = +25c vd = +4v id=45ma typical gain and matching measurements on wafer typical gain and noise figure measurements on wafer 0 4 8 12 16 20 30 31 32 33 34 35 36 37 38 39 40 frequency (ghz) gain (db) 0 1 2 3 4 5 nf (db) -20 -15 -10 -5 0 5 10 15 20 20 25 30 35 40 45 50 frequency (ghz) gain, rloss (db) dbs11 dbs21 dbs22
36-40ghz very low noise amplifier CHA2391 ref. : dsCHA23912240 -28-aug.-02 5/8 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 typical results tamb = +25c vd = 4v ; id = 45ma freq = 37ghz 0 2 4 6 8 10 12 14 16 -12 -10 -8 -6 -4 -2 0 2 4 6 input power ( dbm ) output power ( dbm ) 0 2 4 6 8 10 12 14 16 gain ( db ) freq = 39.5ghz 0 2 4 6 8 10 12 14 16 -14 -12 -10 -8 -6 -4 -2 0 2 4 input power ( dbm ) output power ( dbm ) 0 2 4 6 8 10 12 14 16 gain ( db ) typical output power and gain measurements in test jig (included losses of the jig)
CHA2391 36-40ghz very low noise amplifier ref. : dsCHA23912240 -28-aug.-02 6/8 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 typical chip assembly 25 50 to vd dc drain supply feed to vg1 dc gate supply feed to vg2 dc gate supply feed 47pf 47pf 47pf in out note: supply feed should be capacitively bypassed. mechanical data 1670 +/-35 1290 990 345 645 445 1030 +/-35 445 bonding pad positions. (chip thickness: 100m. all dimensions are in micro meters)
36-40ghz very low noise amplifier CHA2391 ref. : dsCHA23912240 -28-aug.-02 7/8 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 chip biasing this chip is a two stage amplifier, and flexibility is provided by the access to number of pads. the internal dc electrical schematic is given in or der to use these pads in a safe way. in out vg 1 vg 2 25 50 vd vds1 vds2 not exceed vds = 3.5volt ( internal drain to sourc e voltage ). we propose two standard biasing: low noise and low consumption : vd = 3.5v and id = 30ma. low noise and high output power : vd = 4.0v and id = 45ma. ( a separate access to the gate voltages of the first and the output stage is provided. nominal bias is obtained for a typical current of 30ma for the output stage and 15 ma for the first stage. the first step to bias the amplifier is to tune the vg1 = -1v and vg2 to drive 30ma for the full amplifier. then vg1 is reduced to obtain 45 ma of current through t he amplifier.
CHA2391 36-40ghz very low noise amplifier ref. : dsCHA23912240 -28-aug.-02 8/8 specifications subject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 ordering information chip form : CHA2391-99f/00 information furnished is believed to be accurate an d reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by impli cation or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and re places all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or s ystems without express written approval from united monolithic semiconductors s.a.s.
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